KΩ QG 12V .2µF .3µF 10 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Char.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRL3215

IRL3202

IRL3202PBF

IRL3202S

IRL3102

IRL3102PBF

IRL3102S

IRL3102SPBF

IRL3103

IRL3103D1

IRL3103D1PBF

IRL3103D1S

IRL3103D2

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